在这个科技日新月异的时代,无线通讯技术的每一次革新都深刻地改变着我们的生活。今天,我们向大家介绍一款革命性的产品——KCT8570N,这是一款专为IEEE 802.11a/n/ac/ax/be WLAN系统设计的5.15-5.925GHz频段高度集成的射频前端集成电路。KCT8570N不仅集成了高效非线性功率放大器(PA)、带旁路的低噪声放大器(LNA)、相关匹配网络和谐波滤波器,更在性能上实现了前所未有的突破,为Wi-Fi 7及未来无线通讯技术的发展奠定了坚实的基础。
In this era of rapid technological change, every innovation in wireless communication technology has profoundly changed our lives. Today, we introduce a revolutionary product, the KCT8570N, a highly integrated RF front-end integrated circuit in the 5.15-5.925GHz band designed for IEEE 802.11a/n/ac/ax/be WLAN systems. The KCT8570N not only integrates efficient nonlinear power amplifier (PA), low noise amplifier (LNA) with bypass, correlation matching network and harmonic filter, but also achieves unprecedented breakthrough in performance, laying a solid foundation for the development of Wi-Fi 7 and future wireless communication technology.
为了进一步提升系统的稳定性和性能,KCT8570N还集成了直流电压输出功率检测器和定向射频耦合器。这两个功能模块的加入,使得系统能够在运行过程中实现闭环功率控制,从而更加精准地调节输出功率,确保信号传输的稳定性和一致性。这一特性对于提高无线通讯系统的整体性能和用户体验具有重要意义。
To further improve system stability and performance, the KCT8570N also integrates a DC voltage output power detector and directional RF coupler. The addition of these two functional modules enables the system to realize closed-loop power control during operation, so as to adjust the output power more accurately and ensure the stability and consistency of signal transmission. This feature is of great significance to improve the overall performance and user experience of wireless communication system.
在封装设计上,KCT8570N同样展现出了极致的紧凑与精巧。采用3x3x0.75mm的16引脚QFN封装,KCT8570N不仅为现代电子设备节省了大量宝贵的空间,还确保了安装的便捷性和可靠性。无论是智能手机、平板电脑等移动设备,还是路由器、基站等网络设备,KCT8570N都能轻松融入其中,为5GHz高频段WLAN系统的实现提供了强有力的支持。
In terms of package design, the KCT8570N also shows the ultimate compact and compact. In a 16-pin QFN package of 3x3x0.75mm, the KCT8570N not only saves a lot of valuable space for modern electronic devices, but also ensures ease and reliability of installation. Whether it is mobile devices such as smartphones and tablets, or network devices such as routers and base stations, the KCT8570N can be easily integrated into them, providing strong support for the implementation of 5GHz high-band WLAN systems.
产品规格
product standard
集成功能:KCT8570N集成了802.11be 5GHz功率放大器、带旁路的低噪声放大器和收发开关,全面满足现代WLAN系统的需求。
Integrated features: The KCT8570N integrates an 802.11be 5GHz power amplifier, a low-noise amplifier with bypass, and a transceiver switch to fully meet the needs of modern WLAN systems.
输入输出匹配:全匹配设计确保了信号在传输过程中的稳定性和一致性,降低了信号损耗和干扰。
Input and output matching: The full matching design ensures the stability and consistency of the signal during transmission, and reduces the signal loss and interference.
功率检测:内置RF和DC功率检测器,支持系统内的闭环功率控制,提高系统性能和稳定性。
Power detection: Built-in RF and DC power detectors support closed-loop power control within the system to improve system performance and stability.
增益表现:在5V供电下,发射增益高达29.5dB,接收增益为17.0dB,噪声系数为1.8dB,确保了出色的信号放大和接收性能。
Gain performance: Under 5V power supply, the transmit gain is up to 29.5dB, the receive gain is 17.0dB, and the noise figure is 1.8dB, ensuring excellent signal amplification and reception performance.
输出功率:在配合DPD算法的情况下,KCT8570N在不同调制模式和MCS等级下均能表现出色的输出功率和EVM水平。例如,在EHT160/MCS13模式下,输出功率可达+21.5dBm,EVM为-43dB;在HE160/MCS11模式下,输出功率可达+22.5dBm,EVM为-40dB。这些性能参数均达到了业界领先水平。
Output power: When combined with the DPD algorithm, the KCT8570N can perform excellent output power and EVM levels at different modulation modes and MCS levels. For example, in the EHT160/MCS13 mode, the output power can reach +21.5dBm and the EVM is -43dB; In HE160/MCS11 mode, the output power can reach +22.5dBm and the EVM is -40dB. These performance parameters have reached the industry-leading level.
ESD保护:所有引脚均配备了ESD保护电路,提高了设备的抗静电干扰能力,确保了系统的稳定性和可靠性。
ESD protection: All pins are equipped with ESD protection circuit, which improves the anti-static interference ability of the equipment and ensures the stability and reliability of the system.
外部组件需求:KCT8570N的高度集成设计大大减少了外部组件的需求,降低了系统设计的复杂度和成本。
External component requirements: The highly integrated design of the KCT8570N greatly reduces the need for external components, reducing the complexity and cost of system design.
封装尺寸:采用QFN-16L封装,尺寸为3mm x 3mm x 0.75mm,符合JEDEC J-STD-020标准的MSL3等级,能够在260℃下正常工作。
Package size: The QFN-16L package is 3mm x 3mm x 0.75mm, conforming to the MSL3 class of JEDEC J-STD-020 standard, and can work normally at 260 ° C.
环保合规:KCT8570N符合RoHS和REACH标准,采用无铅设计,确保了产品的环保性和安全性。
Environmental compliance: The KCT8570N complies with RoHS and REACH standards and adopts a lead-free design to ensure the environmental protection and safety of the product.
审核编辑 黄宇
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