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这款100V,2mΩ,D 2 PAK(TO-263)NexFET™功率MOSFET旨在最大限度地降低功率转换应用中的损耗。
所有商标均为其各自所有者的财产。
VDS (V) |
Configuration |
Rds(on) Max at VGS=4.5V (mOhms) |
Rds(on) Max at VGS=10V (mOhms) |
IDM, Max Pulsed Drain Current (Max) (A) |
QG Typ (nC) |
QGD Typ (nC) |
Package (mm) |
VGS (V) |
VGSTH Typ (V) |
ID, Silicon limited at Tc=25degC (A) |
ID, package limited (A) |
Logic Level |
CSD19536KTT | CSD18535KTT | CSD18536KTT | CSD18542KTT | CSD19505KTT | CSD19506KTT | CSD19532KTT | CSD19535KTT |
---|---|---|---|---|---|---|---|
100 | 60 | 60 | 60 | 80 | 80 | 100 | 100 |
Single | Single | Single | Single | Single | Single | Single | Single |
2.9 | 2.2 | 5.1 | |||||
2.4 | 2 | 1.6 | 4 | 3.1 | 2.3 | 5.6 | 3.4 |
400 | 400 | 400 | 400 | 400 | 400 | 400 | 400 |
118 | 63 | 108 | 44 | 76 | 120 | 44 | 75 |
17 | 10.4 | 14 | 6.9 | 11 | 20 | 17 | 11 |
D2PAK | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK |
20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
2.5 | 1.9 | 1.8 | 1.8 | 2.6 | 2.5 | 2.6 | 2.7 |
272 | 279 | 349 | 170 | 212 | 291 | 136 | 197 |
200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
No | Yes | Yes | Yes | No | No | No | No |