SSF65R650S2场效应管超结MOS导通内阻0.55Ω
型号:
SSF65R650S2
SSF65R650S2场效应管参数
• Multi-Epi process SJ-FET
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.55Ω
• Ultra Low Gate Charge (typ. Qg = 13.6nC)
• 100% avalanche tested
骊微电子供应SSF65R650S2场效应管超结MOS, 提供SSF65R650S2场效应管参数等,是超致MOS供应商,更多产品手册、应用料资请向骊微电子申请。>>