Single, 40-V, 5-MHz, FET-input operational amplifier
| Number of channels (#) | 1 |
| Total supply voltage (Max) (+5V=5, +/-5V=10) | 44 |
| Total supply voltage (Min) (+5V=5, +/-5V=10) | 10 |
| Rail-to-rail | No |
| GBW (Typ) (MHz) | 5 |
| Slew rate (Typ) (V/us) | 12 |
| Vos (offset voltage @ 25 C) (Max) (mV) | 5 |
| Iq per channel (Typ) (mA) | 5 |
| Vn at 1 kHz (Typ) (nV/rtHz) | 12 |
| Rating | Military |
| Operating temperature range (C) | -25 to 85 |
| Offset drift (Typ) (uV/C) | 5 |
| Input bias current (Max) (pA) | 100 |
| CMRR (Typ) (dB) | 100 |
| Output current (Typ) (mA) | 25 |
| Architecture | FET |
- Advantages
- Replace Expensive Hybrid and Module FET
Op Amps - Rugged JFETs Allow Blow-Out Free Handling
Compared With MOSFET Input Devices - Excellent for Low Noise Applications Using
Either High or Low Source Impedance–Very
Low 1/f Corner - Offset Adjust Does Not Degrade Drift or
Common-Mode Rejection as in Most
Monolithic Amplifiers - New Output Stage Allows Use of Large
Capacitive Loads (5,000 pF) Without Stability
Problems - Internal Compensation and Large Differential
Input Voltage Capability
- Replace Expensive Hybrid and Module FET
- Common Features
- Low Input Bias Current: 30 pA
- Low Input Offset Current: 3 pA
- High Input Impedance: 1012 Ω
- Low Input Noise Current: 0.01 pA/√Hz
- High Common-Mode Rejection Ratio: 100 dB
- Large DC Voltage Gain: 106 dB
- Uncommon Features
- Extremely Fast Settling Time to 0.01%:
- 4 μs for the LFx55 devices
- 1.5 μs for the LFx56
- 1.5 μs for the LFx57 (AV = 5)
- Fast Slew Rate:
- 5 V/μs for the LFx55
- 12 V/μs for the LFx56
- 50 V/μs for the LFx57 (AV = 5)
- Wide Gain Bandwidth:
- 2.5 MHz for the LFx55 devices
- 5 MHz for the LFx56
- 20 MHz for the LFx57 (AV = 5)
- Low Input Noise Voltage:
- 20 nV/√Hz for the LFx55
- 12 nV/√Hz for the LFx56
- 12 nV/√Hz for the LFx57 (AV = 5)
- Extremely Fast Settling Time to 0.01%:
The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET? Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
