具有三态输出的 10 通道、4.5V 至 5.5V 缓冲器
| Technology Family | BCT |
| Supply voltage (Min) (V) | 4.5 |
| Supply voltage (Max) (V) | 5.5 |
| Number of channels (#) | 10 |
| IOL (Max) (mA) | 48 |
| ICC (Max) (uA) | 40000 |
| IOH (Max) (mA) | -24 |
| Input type | Bipolar |
| Output type | 3-State |
| Features | Very high speed (tpd 5-10ns), Over-voltage tolerant inputs, Power up 3-state |
| Rating | Catalog |
- State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
- ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
- P-N-P Inputs Reduce DC Loading
- Flow-Through Architecture Optimizes PCB Layout
- Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
These 10-bit buffers and bus drivers provide high-performance bus interface for wide data paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (
or 
) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.
The SN54BCT29827B is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT29827B is characterized for operation from 0°C to 70°C.
