一、CGHV38375F产品描述
1.CGHV38375F 产品特性
CGHV38375F 400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN on SiC Transistor (IM-FET)PN: CGHV38375FPackage Type: 440226Typical Performance Over 2.75 - 3.75 GHz (TC = 25˚C)Notes:1 VDD = 50 V, IDQ = 500 mA2 Measured at Pin = -10 dBm3 Measured at Pin = 46 dBm and 100 μs; Duty Cycle = 10%Parameter 2.75 GHz 2.9 GHz 3.3 GHz 3.5 GHz 3.75 GHz UnitsSmall Signal Gain1,2 10.0 12.5 12.6 12.6 13.5 dBOutput Power1,3 55.9 57.4 57.5 57.7 56.8 dBmPower Gain1,3 9.9 11.4 11.5 11.7 10.8 dBDrain Efficiency1,3 50 67 62 60 60 %Figure 1.Features• Full S-Band Radar Coverge• 400 W Typical PSAT• 55% Typical Drain Efficiency• >10 dB Large Signal Gain• Pulsed and CW OperationNote: Features are typical performance acrossfrequency under 25°C, pulsed operation. Pleasereference performance charts for additionaldetails.Applications• Civil and Military, Pulsedand CW S-Band RadarDescriptionWolfspeed's CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input andoutput ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over theentire S-Band radar band. This high-power amplifier provides >10 dB of large signal gain and40% power-added efficiency and is ideally suited as a high-power building block supportingboth pulsed and CW radar applications.
2.CGHV38375F技术规格
二、CGHV38375F 应用领域
CGHV38375F Features• Full S-Band Radar Coverge• 400 W Typical PSAT• 55% Typical Drain Efficiency• >10 dB Large Signal Gain• Pulsed and CW OperationNote: Features are typical performance acrossfrequency under 25°C, pulsed operation. Pleasereference performance charts for additionaldetails.
CGHV38375F Applications• Civil and Military, Pulsedand CW S-Band Radar
三、CGHV38375F 应用电路图
CGHV38375F 总结
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