CGHV59070F 70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT

 CGHV59070F

以下是本篇文章正文内容，

一、 CGHV59070F产品描述

1. CGHV59070F产品特性

Features• 4.4 - 5.9 GHz Operation• 90 W POUT typical at 50 V• 14 dB Power Gain• 55% Drain Efficiency• Internally MatchedPackage Type: 440224, 440170PN’s: CGHV59070F, CGHV59070PLarge Signal Models Available for ADS and MWOTypical Performance Over 4.8 - 5.9 GHz (TC = 25˚C)Parameter 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz 5.8 GHz 5.9 GHz UnitsPower Gain at 50 V 13.7 14.2 14.5 14.6 14.3 13.7 13.3 dBOutput Power at 50 V 84 93 101 102 95 84 76 WDrain Efficiency at 50 V 55 56 57 56 54 50 48 %CGHV5907070 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMTDescriptionWolfspeed's CGHV59070 is an internally matched galliumnitride (GaN) high electron mobility transistor (HEMT).The CGHV59070, operating from a 50 volt rail, offersa general purpose, broadband solution to a variety ofRF and microwave applications. The good efficiency,high gain and wide bandwidth capabilities make theCGHV59070 ideal for linear applications such as wirelessinfrastructure and for compressed amplifier circuits. Thetransistor is available in a flange and pill package.Applications• Wireless Infrastructure• Marine Radar• Weather Monitoring• Air Traffic Control• Maritime Vessel Traffic Control• Port Security• Troposcatter Communications• Beyond Line of Sight - BLOS

2. CGHV59070F技术规格

示例：

二、 CGHV59070F应用领域

• 工业控制领域：工业、控制设备美。

• 智能交通设备：收费站、停车场、车内语音提示；

• 广告宣传行业：广告语播报；

三、应用电路图

CGHV59070F总结

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