一、产品描述
1.产品特性
CGHV1F025S Package Type: 3x4 DFN
PN: CGHV1F025S25 W, DC - 15 GHz, 40 V, GaN HEMT
Description
Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electronmobility transistor (HEMT) designed specifically for high efficiency, high gain andwide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- andKu-Band amplifier applications. The datasheet specifications are based on aX-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuitwhile housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.Under reduced power, the transistor can operate below 40V to as low as 20V VDD,maintaining high gain and efficiency
2.CGHV1F025S 技术规格
Features• Up to 15 GHz Operation• 25 W Typical Output Power• 11 dB Gain at 9.4 GHz• Application circuit for 8.9 - 9.6 GHz
二、应用领域
• 工业控制领域：工业、控制设备美。
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三、CGHV1F025S 应用电路图
总结
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