如何组装高性能氮化镓系统

　　如何组装高性能氮化镓系统

　　采用GaN FET建设高速系统并不是一件简单的事。开关电场可以占据空间的周围和上面的包，所以如何使用GaN FET的无线系统的系统组装为整体性能的关键。本文讨论了不同的封装技术对不同应用程序的影响，以及如何将这些封装技术用于构建高性能的GaN设备。

　　氮化镓正迅速取代某些无线应用的技术。在双向私人电台、宽带放大器和蜂窝基础设施等领域，氮化镓的优点是允许更小、更坚固和更可靠的系统。

　　When built on a substrate of silicon carbide （SiC）， GaN offers higher breakdown voltages than other technologies （over 100 V）， as well as electron mobility ten times that of silicon. It is this combination of being able to run at higher temperatures that supports the use in both high-voltage， power switching devices and in RF power amplifiers. With operating channel temperatures over 150°C and a higher power density of 5 to 30 W/mm， class A and AB linear amplifiers are being increasingly used for OFDM， W-CDMA， EDGE and CDMA systems. The higher frequency and power performance means that the devices can be operated at more efficient levels to achieve the same results， giving significant savings in power consumption.