资料介绍
DESCRIPTION
The DG2531/DG2532 is a sub 1-Ω (0.4 Ω at 2.7 V) dual
SPDT analog switches designed for low voltage applications.
The DG2531/DG2532 has on-resistance matching (less than
0.05 Ω at 2.7 V) and flatness (less than 0.2 Ω at 2.7 V) that
are guaranteed over the entire voltage range. Additionally,
low logic thresholds makes the DG2531/DG2532 an ideal
interface to low voltage DSP control signals.
The DG2531/DG2532 has fast switching speed (on/off time
at 40 and 35 ns) with break-before-make guaranteed. In the
On condition, all switching elements conduct equally in both
directions. Off-isolation and crosstalk is - 69 dB at 100 kHz.
The DG2531/DG2532 is built on Vishay Siliconix’s
high-density low voltage CMOS process. An eptiaxial layer is
built in to prevent latchup. The DG2531/DG2532 contains
the additional benefit of 2000 V ESD protection.
Packaged in space saving MSOP-10, the DG2531/DG2532
is a high performance, low rON switches for battery powered
applications.
The DG2531/DG2532 is a sub 1-Ω (0.4 Ω at 2.7 V) dual
SPDT analog switches designed for low voltage applications.
The DG2531/DG2532 has on-resistance matching (less than
0.05 Ω at 2.7 V) and flatness (less than 0.2 Ω at 2.7 V) that
are guaranteed over the entire voltage range. Additionally,
low logic thresholds makes the DG2531/DG2532 an ideal
interface to low voltage DSP control signals.
The DG2531/DG2532 has fast switching speed (on/off time
at 40 and 35 ns) with break-before-make guaranteed. In the
On condition, all switching elements conduct equally in both
directions. Off-isolation and crosstalk is - 69 dB at 100 kHz.
The DG2531/DG2532 is built on Vishay Siliconix’s
high-density low voltage CMOS process. An eptiaxial layer is
built in to prevent latchup. The DG2531/DG2532 contains
the additional benefit of 2000 V ESD protection.
Packaged in space saving MSOP-10, the DG2531/DG2532
is a high performance, low rON switches for battery powered
applications.
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