资料介绍
The LM5100A/B/C and LM5101A/B/C High Voltage Gate
Drivers are designed to drive both the high-side and the lowside
N-Channel MOSFETs in a synchronous buck or a halfbridge
configuration. The floating high-side driver is capable
of operating with supply voltages up to 100V. The “A” versions
provide a full 3A of gate drive while the “B” and “C” versions
provide 2A and 1A respectively. The outputs are independently
controlled with CMOS input thresholds (LM5100A/B/C)
or TTL input thresholds (LM5101A/B/C). An integrated high
voltage diode is provided to charge the high-side gate drive
bootstrap capacitor. A robust level shifter operates at high
speed while consuming low power and providing clean level
transitions from the control logic to the high-side gate driver.
Under-voltage lockout is provided on both the low-side and
the high-side power rails. These devices are available in the
standard SOIC-8 pin, PSOP-8 pin and the LLP-10 pin packages.
The LM5100C and LM5101C are also available in
eMSOP-8 package.
Drivers are designed to drive both the high-side and the lowside
N-Channel MOSFETs in a synchronous buck or a halfbridge
configuration. The floating high-side driver is capable
of operating with supply voltages up to 100V. The “A” versions
provide a full 3A of gate drive while the “B” and “C” versions
provide 2A and 1A respectively. The outputs are independently
controlled with CMOS input thresholds (LM5100A/B/C)
or TTL input thresholds (LM5101A/B/C). An integrated high
voltage diode is provided to charge the high-side gate drive
bootstrap capacitor. A robust level shifter operates at high
speed while consuming low power and providing clean level
transitions from the control logic to the high-side gate driver.
Under-voltage lockout is provided on both the low-side and
the high-side power rails. These devices are available in the
standard SOIC-8 pin, PSOP-8 pin and the LLP-10 pin packages.
The LM5100C and LM5101C are also available in
eMSOP-8 package.
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