使用磷化铟砷化铟镓双异质结双极晶体管的宽带放大器的高数据速率

Abstract 2
1 Introduction 3
1.1 Motivation    . . . 3
1.1.1 Scope of theWork   5
1.2 State of the Art    6
1.2.1 Broadband Amplifiers   . 6
1.2.2 Devices    7
2 InP-based Double Heterojunction Bipolar Transistor 11
2.1 Operating Principle   . . . 12
2.2 Technology    . . 16
2.2.1 Active Devices   . 16
2.2.2 Passive Structures   18
2.3 Layer Structure Optimization   . 19
2.3.1 Initial Layer Structure (A)   . . . . 19
2.3.2 Improved Layer Structure (B)   . . 24
2.3.3 Optimized Layer Structure (C)   . 28
2.3.4 Summary   . . . . 33
2.4 Transistor Layout Optimization   34
2.4.1 EmitterWidth Design   . 36
2.4.2 Base ContactWidth Design   . . . 38
2.4.3 Collector Contact Design   40
2.4.4 Emitter Length Design   . 40
2.4.5 Summary   . . . . 43
3 Transistor Models 45
3.1 Large-SignalModels   . . 46
3.1.1 Gummel-PoonModel   . . 46
3.1.2 AlternativeModels   47
3.1.3 UCSDModel   . . 47
3.2 UCSDModel Extraction   49
3.2.1 Diode Parameters   49
3.2.2 Resistances   . . . 51
3.2.3 Junction Capacitances   . 55
3.2.4 Transit and Delay Times   56
3.3 Small-SignalModel   . . . 60
3.3.1 Model Extraction   60
3.3.2 Investigation of Transistors   . . . . 63
3.4 Summary    . . . 68
4 Methods of Broadband Amplifier Characterization 69
4.1 Figures ofMerit    69
4.1.1 Bandwidth  . . . . 69
4.1.2 Group Delay   . . . 71
4.1.3 Output Power   . . 71
4.2 Small-Signal-Characterization (S-Parameter)  . . . 72
4.3 Large-Signal-Characterization   . 73
4.3.1 Output Power   . . 73
4.3.2 Signal Distortion (Eye-Diagram)   . 74
5 Realization of Compact Lumped Amplifiers 77
5.1 Design Considerations   . 77
5.2 Realized Amplifiers   . . . 79
5.2.1 Comparison of Lumped Amplifier Approaches  . . 79
5.2.2 High-Gain Amplifier for 40 Gbit/s   82
5.2.3 Low-Power Amplifier for 80 Gbit/s  . . . . 85
5.3 Output Power Limit   . . 87
6 Distributed Amplifiers for 80 Gbit/s 91
6.1 Design Considerations   . 92
6.1.1 Gain Cell Design Concepts   . . . . 93
6.1.2 Attenuation Compensation   . . . . 93
6.1.3 Coplanar and Microstrip Transmission Lines  96
6.1.4 Transmission Line Termination   . 97
6.1.5 Linear andMatrix Design   . . . . 98
6.1.6 Single-ended and Differential Design  . . . 98
6.2 Realized Amplifiers   . . . 99
6.2.1 Low-Power 100 GHz Bandwidth Amplifier  99
6.2.2 Tunable Amplifier for Loss Compensation  103
6.2.3 High-Power Amplifier for 80 Gbit/s  . . . . 108
6.3 Summary    . . . 114
7 Conclusion and Outlook 115
A Extracted Large-Signal Model Parameters 117
Bibliography 119
List of Abbreviations 129
Acknowledgments 131
Curriculum Vitae 132