Introduction of New Generation Field-Stop Shorted-Anode IGBT

　　Introduction of New Generation Field-Stop Shorted-Anode IGBT

　　随着电力电子和半导体的快速发展，每一个电力电子应用都需要专用和专门的半导体开关器件从成本和性能的角度来看。现场停止（FS）的IGBT提供较低的饱和压降和较低的开关损耗与传统的非穿通（NPT）IGBT。此外，一个相对较新的改进，集成的反并联二极管的IGBT芯片通过使用短路阳极（SA）技术，使FS IGBT非常适合软开关功率变换应用。

　　现场停止短路阳极沟槽IGBT与NPT

　　尽管NPT IGBT提高降低少数载流子的注入量和关闭过渡期间提高重组率的开关速度，这是不可取的，由于其较高的VCE（SAT）的高功率应用，因为它的N-基板必须轻掺杂，因此，较厚的基板需要维持电场关闭状态时如图1所示（一）。的N -基是IGBTs的饱和压降的主要因素的厚度。

　　The “n” doped field-stop layer between “n-” drift layer and “p+” collector of a conventional NPT IGBT， as shown in Figure 1（b）， drastically improves the performance of IGBT. This is the field-stop IGBT concept. In the FS IGBT， the electric field rapidly decreases within the field-stop layer while gradually decreasing within “n-” drift layer. Therefore， the thickness of the “n-” drift layer and the saturation voltage drop can be significantly improved. The trench-gate structure also improves the saturation voltage drop. The field-stop layer of a FS IGBT accelerates the majority carrier recombination during the turn-off instance， and thereby， its tail current is much smaller than NPT or PT IGBTs. This leads to lower switching losses and lower turn-off energy， Eoff.