开发板进行简单评价Egan FET

　　开发板进行简单评价Egan FET

　　长期以来，广泛的带隙氮化镓在硅（GaN硅）晶体管现在商业上可用。他们被吹捧为取代硅基MOSFET，这被证明是低效的许多高性能电源设计。最近，在Si基HEMT器件和场效应管的几个供应商GaN已经在市场上出现，其中高效电源转换（EPC）。在过去的四年里，该公司一直在扩大其商用增强型家庭（常关）GaN FET场效应管或根。今天，在低压eGaN FET家庭约有十一成员，并在超高频线八。

　　这些高性能、宽禁带半导体晶体管被推荐用于各种高效率、高密度直流/直流转换器和其他电源瞄准新兴应用如无线电力传输、包络跟踪、射频传输、太阳能微型逆变器、激光雷达、遥感和D类音频放大器。帮助设计师了解硅功率MOSFET和eGaN FETs之间的微妙差异，从而促进他们在即将到来的电源解决方案的采用，为公司创造了许多应用笔记，白皮书，并为其伊根FET视频系列。

　　What’s more， to expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs， EPC has released several development boards in the last few years. The most recent introductions， which include EPC9022 through EPC9030， offer half-bridge topology with an on-board gate driver. They are designed to simplify the evaluation of members in the company’s EPC8000 family of ultra-high-frequency， high-performance eGaN FETs. Currently， there are eight members in the EPC8000 family and there is a corresponding development board for each part， as shown in Table 1.