亚太经合组织2013个新的和值得注意的部分和技术

　　亚太经合组织2013个新的和值得注意的部分和技术

　　应用电力电子会议和博览会是电力电子学中最著名的活动，于3月17日至21， 2013日在长滩CA会议中心举行。亚太经合组织2013继续其长期的传统，以解决电力电子工程师的直接和长期利益的问题。这是事件工程师参加升级他们的知识交流和直流和DC /直流电源，电机驱动器，逆变器，LED驱动器和UPS设备。以下按字母顺序列出的是在展会上推出新产品的供应商的抽样。

　　AVX介绍几种薄膜电容，肖特基整流二极管，超多层介电陶瓷帽，和一个径向瓶盖系列。该公司的目标是需要更长的寿命帽，在电力应用中的低热损失，二极管目标开关电源，以及多层帽适合高压系统。他们还推出了开关电源的电容器软件工具与链接下载。AVX公司TCJ系列电容器（图1），LED电视的目标是超过100 V的里程碑，第一，今天几乎两倍额定电压类似的产品在市场上是。它们的特点是6.8µF / 100 V（V的情况下），如tcjb685m025r0150，和3.3µF / 125 V（D型）tcjc335m063r0200钽聚合物SMD器件。电容器使设计工程师可以用一个组件取代两个钽聚合物电容器。

　　Cree introduced the C2M0080120D 20 A， second generation， 1，200 V SiC MOSFET （Figure 2）， and CPM2-1200-0025B 50 A models that are said to deliver twice the amps per dollar. They are targeting the devices for applications including solar circuits， motor drives， and UPS systems. The higher frequency of the SiC devices enables smaller components and that improves the cost-performance trade-off. The performance of these SiC MOSFETs enables the reduction of required current rating by 50 to 70 percent in some high-power applications. When these MOSFETs are properly optimized， customers can now get the performance benefits of SiC with the same or lower systems cost as with previous silicon solutions. For solar inverters and UPS systems， the efficiency improvement is accompanied by size and weight reductions. In motor drive applications， the power density can be more than doubled while increasing efficiency and providing up to twice the maximum torque of similarly rated silicon solutions. The product offering range has been extended to include a much larger 25 mΩ die aimed at the higher power module market for power levels above 30 kW. The 80 mΩ device is intended as a lower cost， higher performance upgrade to the first-generation MOSFET. Die are available with ratings of 25 mΩ， intended as a 50 A building block for high-power modules. The 80 mΩ MOSFET in a TO-247 package is intended as a higher-performance， lower-cost replacement for Cree’s first-generation CMF20120D.