IS64WV25616BLL/BLS,256K×16高速异步CMOS静态RAM

　　The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed， 4，194，304-bit static RAMs organized as 262，144 words by 16 bits. It is fabricated using ISSI‘s highperformanceCMOStechnology.Thishighlyreliableprocess coupled with innovative circuit design techniques， yields high-performance and low power consumption devices. When CE is HIGH （deselected）， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs， CE and OE. The active LOW Write Enable （WE） controls both writing and reading of the memory. A data byte allows Upper Byte （UB） and Lower Byte （LB） access. The IS61WV25616Axx/Bxx and IS64WV25616Bxx are packaged in the JEDEC standard 44-pin 400mil SOJ， 44-pin TSOP Type II and 48-pin Mini BGA （6mm x 8mm）.