IS64WV12816DBLL/DBLS,128K×16高速异步CMOS静态RAM

　　The ISSI IS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed， 2，097，152-bit static RAMs organized as 131，072 words by 16 bits. It is fabricated using ISSI‘s highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques， yields high-performance and low power consumption devices. When CE is HIGH （deselected）， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs， CE and OE. The active LOW Write Enable （WE） controls both writing and reading of the memory. A data byte allows Upper Byte （UB） and Lower Byte （LB） access. The IS61WV12816DAxx/DBxx and IS64WV12816DBxx are packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA （6mm x 8mm）.