RT9612A/B同步整流降压MOSFET驱动器

　　The RT9612A/B is a high frequency， synchronous rectified， single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities. The RT9612A/B can be utilized under both VCC = 5V or VCC = 12V applications. The RT9612A/B also builds in an internal power switch to replace external boot strap diode. The RT9612A/B can support switching frequency efficiently up to 500kHz. The RT9612A/B has the UGATE driving circuit and the LGATE driving circuit for synchronous rectified DC/DC converter applications. The driving rise/ fall time capability is designed within 30ns and the shoot through protection mechanism is designed to prevent shoot through of high side and low side power MOSFETs. The RT9612A/B has PWM tri-state shut down function which can force driver output into high impedance. The difference of the RT9612A and the RT9612B is the propagation delay， tUGATEpdh. The RT9612B has comparatively large tUGATEpdh than RT9612B. Hence， the RT9612A is usually recommended to be utilized in performance oriented applications， such as high power density CPU VR or GPU VR. The RT9612A/B comes in a small footprint with SOP-8， SOP-8 （Exposed Pad） and WDFN-8EL 3x3.