TCET1103数据手册下载

 最小包装： 5000PCS/包

　　DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS • UL1577， file no. E52744， double protection • cUL tested， file A52744 • BSI： EN 60065:2002， EN 60950:2000 • DIN EN 60747-5-5 （VDE 0884） • FIMKOFEATURES • High common mode rejection • Low temperature coefficient of CTR • CTR offered in 9 groups • Reinforced isolation provides circuit protection against electrical shock （safety class II） • Isolation materials according to UL 94 V-O • Pollution degree 2 （DIN/VDE 0110/resp. IEC 60664） • Climatic classification 55/100/21 （IEC 60068 part 1） • Rated impulse voltage （transient overvoltage） VIOTM = 6 kVpeak • Isolation test voltage （partial discharge test voltage） Vpd = 1.6 kV • Rated isolation voltage （RMS includes DC） VIOWM = 600 VRMS • Rated recurring peak voltage （repetitive） VIORM = 848 Vpeak • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index： CTI ≥ 175 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC