0.82~2.2GHz高线性功率驱动放大器设计

用Jazz 0.35μm SiGe BiCMOS 工艺设计了一个宽带、高线性和增益可调的功率驱动放
大器。放大器采用两级级联结构，第一级采用差分结构，双端输入单端输出，第二级采用单端输入单端输出的共发射极放大结构，在3.3V 电源电压下，放大器带宽达到0.82~2.2GHz，高增益模式下放大器小信号增益为29.7±1.3dB，低增益模式下小信号增益为19.7±0.9dB，输出1dB 压缩点大于13.7dBm，总的直流电流小于20 mA。
关键词： 功率驱动放大器；SiGe BiCMOS; 宽带；1dB 压缩点
0.82~2.2GHz High Linear Pre-Power Amplifier Design
Yu Weiwei1, 2 , Li Zhiqun1
(1 Institute of RF- & OE-ICs, 2 College of Integrated Circuits, Southeast University; Nanjing China; 210096)
Abstract: A high linearity broadband power amplifier driver with tunable power gain is realized in
Jazz 0.35μm SiGe BiCMOS technology. The amplifier adopt two-stage cascade amplifier
structure , first stage adopt differential structure with differential inputs and single-ended outputs ,
the second stage adopt common-emitter structure with single-ended inputs and single-ended
outputs. The amplifier works from 0.82GHz to 2.2GHz with a single 3.3V power supply. The
amplifier small signal gain from 0.82GHz to 2.2GHz is 29.7±1.3dB in high gain mode and is
19.7±0.9dB in low gain mode. With simple temperature-insensitive bias, the total current is less
than 20 mA. The output 1dB compression points are greater than 13.7dBm from 0.82GHz to
2.2GHz both in high gain mode and in low gain mode.
Key words: power amplifier; SiGe BiCMOS; broad band; 1dB compression point