不同掺Al3+浓度的ZnO:Al薄膜性能研究

采用溶胶-凝胶法制备ZnAl(ZAO)薄膜，得到了不同掺Al3＋浓度的ZAO薄膜；利用X射线衍射仪分析、原子力显微镜、紫外-可见分光光度计及四探针法等仪器与方法对其性能进行了测试。通过分析比较，得出所制备的ZAO薄膜为多晶纤锌矿结构，薄膜表面平整、晶粒致密均匀；Al3＋掺杂能提高其导电性能：低掺杂时，薄膜在紫外-可见光范围的透过率超过80％，并伴有蓝移现象产生；高掺杂时，其透过率无明显增加，但蓝移现象加剧，最大蓝移量达340 nm 。
ZnAl (ZAO) thin films with different proportion of Al3+ doping are prepared by sol-gel method. XRD, AFM, ultraviolet-visible spectroscope meter and the method of four-explorwtion-needle are adopted to test the property of ZAO thin films. Through analysis and comparison, hereinafter phenomena can be obtained: ZAO thin films prepared by sol-gel method has polycrystalline hexagonal wurtzite structure , the surface of the ZAO thin films is flat, the crystal is very thickness and symmetry. The conductivity can be improved by Al3+ doping. The transmittance in ultraviolet-visible region is higher than 80％ with hypo-Al3+ doping, accompanying the phenomena of Burstein moving. The transmittance increases indistinctively, but the phenomena of burstein moving is aggravating, the most amount of Burstein moving measure up to 340 nm.