SUPREM-III进行集成电路离子注入的工艺模拟

随着集成电路工艺的不断发展，工艺模拟软件功能也在不断的改善，但不足之处也不
断暴露出来，工艺模拟过程中没有考虑仪器本身影响。所以在工艺模拟中有必要建立一个模型，本文以离子注入工艺为例,研究沟道效应对离子注入工艺的影响,并在计算机上采用SUPREM-III完成离子注入工艺初始条件的编辑以及离子注入工艺模拟，并对模拟结果曲线进行比较。
关键词 离子注入; 沟道效应; 工艺模拟
Abstract With the rapid development in the process of intenrated circuits, the
function of the process simulation software has been improved constantly, but its
shortcoming appear sincreasingly. The influence of equipment on the process has not
been counted in. In order to promote the improvement of this situation, it is
necessary to establish an equipment model in process simulation. Taking the process
of ion implantation as example, some elementary research on ion implantation
equipment model considering the influence of the channeling effects on the process
is accomplished. The edit of process initial condition and ion implantation process
simulation are done on the computer. The simulation curves are also compared.
Key words: ion implantation ; channeling effects ; process simulation