高介电常数介质对电容层析成像传感器灵敏场影响的研究

以有限元仿真实验为基础, 通过高介电常数介质在ECT 传感器内不同分布时灵敏场的比较研究, 结果表明, 传感器内部各处灵敏度变化不仅与管内高介电常数介质的大小和分布有关, 还与该点在灵敏场中所处的位置有关。总结一般规律为:高介电常数介质所在的区域以及附近的区域灵敏度变化最大; 越靠近电极附近的区域灵敏度的变化越大; 高介电常数介质对灵敏场的影响在传感器内部呈马鞍形分布。
关键词　层析成像　有限元　灵敏场　传感器
Abstract　U sing finite element method, the sensit ivity dist ribut ions under different dist ribut ions of h igh dielec2 t ric substance were calculated1By comparing these sensit ivity dist ribut ions, found that the disto rt ion of the sensi2 t ivity dist ribut ion has relat ions w ith the size of sect ion of the substance, it s po sit ion in the ECT senso r and also it s po sit ion in the sensit ivity dist ribut ion1The disto rt ion is the heaviest where the h igh dielect ric substance is lo2 cated1The disto rt ion is mo re heavier when the substance near to the ECT elect rode1The disto rt ion of the sensi2 t ivity dist ribut ion by h igh dielect ric substance is like a saddle1
Key words　Tomography　F inite element　Sensit ivity dist ribut ion　Senso r