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标签 > 锐骏半导体
深圳锐骏半导体股份有限公司(Ruichips)是一家专注从事功率半导体研发、生产、销售的国家高新技术企业,公司位于深圳市南山科技园长园新材料港园区内,现有员工200余人,其中研发和技术支持相关人员占45%.
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型号 | 描述 | 数据手册 | 参考价格 |
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RU2H15S | RU2H15S - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU2568L | RU2568L - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU2560L | RU2560L - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU2520H | RU2520H - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU20P4C | RU20P4C - P-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU20E8H | RU20E8H - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU20D10H | RU20D10H - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU2020H | RU2020H |
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RU2013H | RU2013H - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1HP40R | RU1HP40R - P-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1HP40Q | RU1HP40Q - P-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1HL13L | RU1HL13L - P-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1HE4H | RU1HE4H - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1HE4D | RU1HE4D - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1HE3H | RU1HE3H - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1HE16L | MOS管 N-Channel VDS=100V VGS=±20V ID=16A RDS(ON)=90mΩ@10V TO252 |
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RU1HE12L | MOS管 N-Channel VDS=100V VGS=±20V ID=12A RDS(ON)=160mΩ@10V TO252 |
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RU1HC2H | RU1HC2H - Complementary Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H80S | RU1H80S - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H80R | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):80A;功率(Pd):188W;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,40A;阈值电压(Vgs(th)@Id):4V@250uA; |
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RU1H80Q | RU1H80Q - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H80P | RU1H80P - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H40L | RU1H40L - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H35S | RU1H35S - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H35R | RU1H35R - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H35Q | RU1H35Q - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H35L | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):40A;功率(Pd):97W;导通电阻(RDS(on)@Vgs,Id):25mΩ@10V,16A;阈值电压(Vgs(th)@Id):4V@250uA; |
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RU1H190S | RU1H190S - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H190R | RU1H190R - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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RU1H130R | RU1H130R - N-Channel Advanced Power MOSFET - Ruichips Semiconductor Co., Ltd |
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