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标签 > intersil
Intersil公司是一家全球性的技术领先者,专门设计和制造高性能的模拟半导体。Intersil总部设在圣何塞,加利福尼亚州,Intersil的使命是成为首屈一指的高性能模拟公司。
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型号 | 描述 | 数据手册 | 参考价格 |
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KMB001 | KMB001 - 8-Bit to 16-Bit, 40MSPS to 500MSPS ADC Evaluation System - Intersil Corporation |
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TPSD686K020R00070-T | TPSD686K020R00070-T - Wide VIN Negative VOUT Buck-Boost Regulator With Up to 5A Output Current - Intersil Corporation |
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MM2541 | MM2541 - SPICE OPERATIOANAL AMPLIFIER MACRO MODEL - Intersil Corporation |
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FSYE923A0R4 | FSYE923A0R4 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYE923A0R | FSYE923A0R - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYE923A0D | FSYE923A0D - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYE913A0R | FSYE913A0R - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYE913A0D3 | FSYE913A0D3 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYC9160R3 | FSYC9160R3 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYC9160D3 | FSYC9160D3 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYC9160D1 | FSYC9160D1 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYC9160D | FSYC9160D - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSYC360R | FSYC360R - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSYC360D | FSYC360D - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSTYC9055R3 | FSTYC9055R3 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSTYC9055R1 | FSTYC9055R1 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSTYC9055R | FSTYC9055R - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSTYC9055D3 | FSTYC9055D3 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSTJ9055R4 | FSTJ9055R4 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSTJ9055D1 | FSTJ9055D1 - Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation |
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FSS13A0R3 | FSS13A0R3 - 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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FSS13A0R1 | FSS13A0R1 - 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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FSS13A0D1 | FSS13A0D1 - 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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FSPYE234R3 | FSPYE234R3 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSPYE234R | FSPYE234R - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSPYE234D1 | FSPYE234D1 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSPYE230R4 | FSPYE230R4 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSPYE230R | FSPYE230R - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSPYE230F4 | FSPYE230F4 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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FSPYE230D1 | FSPYE230D1 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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