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标签 > ips
侵入保护(阻止)系统(IPS)是新一代的侵入检测系统(IDS),可弥补IDS存在于前摄及假阳性/阴性等性质方面的弱点。IPS能够识别事件的侵入、关联、冲击、方向和适当的分析,然后将合适的信息和命令传送给防火墙、交换机和其它的网络设备以减轻该事件的风险。
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型号 | 描述 | 数据手册 | 参考价格 |
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CRSS042N10N | TO263-3 |
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CRSS052N08N | TO263-3 |
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CRTD055N03L | 沟槽N-MOSFET 30V,4.3米Ω, 58A至252 |
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CS9N20A4R | MOS管 N-Channel VDS=200V VGS=±30V ID=9A RDS(ON)=240mΩ TO252 |
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CS7N65A4R | MOS管 N-Channel VDS=650V VGS=±30V ID=7A RDS(ON)=1.4Ω@10V TO252 |
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CS630A4H | MOS管 N-Channel VDS=200V VGS=±30V ID=9A RDS(ON)=280mΩ@10V TO252 |
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PC817SC | 6V 50mA |
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IPT40Q06-TEH | IPT40Q06-TEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT40Q06-SEH | IPT40Q06-SEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT40Q06-CEH | IPT40Q06-CEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT4006-XXH | IPT4006-XXH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT4006-50H | IPT4006-50H - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-DEH | IPT2508-DEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-DEB | IPT2508-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-CEH | IPT2508-CEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-CEB | IPT2508-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-CEA | IPT2508-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-BEH | IPT2508-BEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. |
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IPT2508-BEA | IPT2508-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2506-DEH | IPT2506-DEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2506-CEH | IPT2506-CEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2506-CEB | IPT2506-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2506-BEB | IPT2506-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2506-BEA | IPT2506-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q08-TEB | IPT20Q08-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q08-TEA | IPT20Q08-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q08-SEB | IPT20Q08-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q08-SEA | IPT20Q08-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q08-CEB | IPT20Q08-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q08-CEA | IPT20Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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