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标签 > ips
侵入保护(阻止)系统(IPS)是新一代的侵入检测系统(IDS),可弥补IDS存在于前摄及假阳性/阴性等性质方面的弱点。IPS能够识别事件的侵入、关联、冲击、方向和适当的分析,然后将合适的信息和命令传送给防火墙、交换机和其它的网络设备以减轻该事件的风险。
文章:67个 浏览:35524次 帖子:8个
型号 | 描述 | 数据手册 | 参考价格 |
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IPT20Q06-TEB | IPT20Q06-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q06-TEA | IPT20Q06-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q06-SEB | IPT20Q06-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q06-SEA | IPT20Q06-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q06-CEB | IPT20Q06-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT20Q06-CEA | IPT20Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2008-DEB | IPT2008-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2008-CEB | IPT2008-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2008-CEA | IPT2008-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2008-BEB | IPT2008-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2008-BEA | IPT2008-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2006-DEB | IPT2006-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2006-DEA | IPT2006-DEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2006-CEB | IPT2006-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2006-CEA | IPT2006-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT2006-BEA | IPT2006-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT16Q08-CEB | IPT16Q08-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT16Q08-CEA | IPT16Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT16Q08-BEB | IPT16Q08-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT16Q08-BEA | IPT16Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT16Q06-CEB | IPT16Q06-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT16Q06-CEA | IPT16Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT16Q06-BEB | IPT16Q06-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1608-SEB | IPT1608-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1608-SEA | IPT1608-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1608-CEB | IPT1608-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1608-CEA | IPT1608-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1608-BEA | IPT1608-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1606-SEB | IPT1606-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1606-SEA | IPT1606-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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