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标签 > ips
侵入保护(阻止)系统(IPS)是新一代的侵入检测系统(IDS),可弥补IDS存在于前摄及假阳性/阴性等性质方面的弱点。IPS能够识别事件的侵入、关联、冲击、方向和适当的分析,然后将合适的信息和命令传送给防火墙、交换机和其它的网络设备以减轻该事件的风险。
文章:67个 浏览:35524次 帖子:8个
型号 | 描述 | 数据手册 | 参考价格 |
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IPT1606-CEB | IPT1606-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1606-BEB | IPT1606-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1606-BEA | IPT1606-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q08-CEF | IPT12Q08-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q08-CEB | IPT12Q08-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q08-CEA | IPT12Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q08-BEB | IPT12Q08-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q08-BEA | IPT12Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q06-CEF | IPT12Q06-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q06-CEB | IPT12Q06-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q06-CEA | IPT12Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q06-BEF | IPT12Q06-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q06-BEB | IPT12Q06-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT12Q06-BEA | IPT12Q06-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-TEF | IPT1208-TEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-TEB | IPT1208-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-TEA | IPT1208-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-SEF | IPT1208-SEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-SEB | IPT1208-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-SEA | IPT1208-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-CEB | IPT1208-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-CEA | IPT1208-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-BEF | IPT1208-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-BEB | IPT1208-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1208-BEA | IPT1208-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-TEF | IPT1206-TEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-TEB | IPT1206-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-TEA | IPT1206-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-SEF | IPT1206-SEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT1206-SEB | IPT1206-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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