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标签 > ips
侵入保护(阻止)系统(IPS)是新一代的侵入检测系统(IDS),可弥补IDS存在于前摄及假阳性/阴性等性质方面的弱点。IPS能够识别事件的侵入、关联、冲击、方向和适当的分析,然后将合适的信息和命令传送给防火墙、交换机和其它的网络设备以减轻该事件的风险。
文章:67个 浏览:35524次 帖子:8个
型号 | 描述 | 数据手册 | 参考价格 |
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IPT0808-CEF | IPT0808-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-CED | IPT0808-CED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-CEB | IPT0808-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-BEI | IPT0808-BEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-BEF | IPT0808-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0808-BED | IPT0808-BED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-SEI | IPT0806-SEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-SEF | IPT0806-SEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-SED | IPT0806-SED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-SEB | IPT0806-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-SEA | IPT0806-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-CEI | IPT0806-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-CEF | IPT0806-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-CEB | IPT0806-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-CEA | IPT0806-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-BEI | IPT0806-BEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-BEF | IPT0806-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-BEB | IPT0806-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-BEA | IPT0806-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT0806-10A | IPT0806-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-TEI | IPT04Q08-TEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-TED | IPT04Q08-TED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-TEB | IPT04Q08-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-TEA | IPT04Q08-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-SEI | IPT04Q08-SEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-SED | IPT04Q08-SED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-SEA | IPT04Q08-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-DEI | IPT04Q08-DEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-DED | IPT04Q08-DED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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IPT04Q08-DEB | IPT04Q08-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. |
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