GENERAL DESCRIPTION
The AP50N06 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as LCD inverter, computer power
management and DC to DC converter circuits which need low in-line
power loss.
FEATURES
● RDS(ON)≦ mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
● Secondary Synchronous Rectification
